2N2907 Transistor Data

Key transistor data for the 2N2907 general purpose PNP silicon transistor including key electrical parameters, pinout, package type and many other key transistor details.

The 2N2907 PNP transistor and its family of similar devices are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching circuit designs and applications.

Key details and performance parameters for the 2N2907 transistor.

Transistor parameters & data
Parameters	Details
Transistor type	PNP silicon switching transistor
Package type	TO18
V_CBO max (V)	-60
V_CEO max (V)	-40
V_EBOmax (V)	-5
V_CEsat (V)	-400mV @ I 150mA
I_C max (mA)	-600
T_J Max °C	200
P_TOT nW	400
f_T min (MHz)	200
C_OB	8p
h_fe	100 min
I_C for h_fe	-150 mA
Similar / equivalents	BSW24, 2N2907A

Outline:

Pinout:

Notes: Dependent upon the manufacturer, the case style may vary. For example On Semiconductor manufacture the device in a plastic package.

This is a good example of the fact that it is necessary to be careful when using product from different manufacturers.

Alternative TO92 style

Outline:

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Pinout:

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameers that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.