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2N3375 Transistor Data
Key transistor data for the 2N3375 RF power transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
This is an NPN silicon high frequency transistor designed for power amplifier and oscillator applications in a variety of forms of equipment.
It is suitable for output or even driver circuits in VHF and UHF equipment, but also has many other applications.
Key details and performance parameters for the 2N3375 transistor.
| Transistor parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN silicon RF power transistor |
| Package type | TO60 |
| VCBO max (V) | 65 |
| VCEO max (V) | 40 |
| VEBOmax (V) | 4 |
| IC max (mA) | 1500 peak, 0.5 continuous |
| TJ Max °C | 200 |
| PTOT W | 11.6 dissipation max |
| fT min (MHz) | 500 typical |
| COB | 10pF |
| hfe | |
| IC for hfe | |
| Similar / equivalents | |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
There are few interesting pints and precautions to be noted for te 2N3866.
• Heatsink
A heatsink is normally used with this transistor because it has a stud mounting which is normally intended for mounting on a heatsink to enable the transistor to provide its full output capability.
It should be noted that the stud is not connected internally to any of the electrodes.
• Intended applications
The 2N3375 is intended for use in class A, B and C RF amplifiers, frequency multipliers and oscillators.
The transistor is intended for use in VHF / UHF applications and it is capable of providing about 7.5W minimum RF output at 100 MHz and 3 W minimum at 00 MHz.
Written by Ian Poole .
Experienced electronics engineer and author.
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