2N3553 Transistor Data

Key transistor data for the 2N3553 RF power transistor including key electrical parameters, pinout, package type and many other key transistor details.

The 2N3553 is an epitaxial silicon NPN transistor of the 'overlay' emitter electrode construction type. It is intended for use in class A, B, and C amplifiers, frequency multipliers and oscillators.

As a high power class C amplifier, a circuit using a 2N3553 would typically provide up to 2.5 watts output up to frequencies of 250 MHz or more. Asa high power oscillator it could typically provide 1.5 watts of RF power.

Key details and performance parameters for the 2N23553 transistor.

Transistor parameters & data
Parameters	Details
Transistor type	NPN silicon RF power transistor
Package type	TO39
V_CBO max (V)	65
V_CEO max (V)	40
V_EBOmax (V)	4
I_C max (mA)	1000 peak, 330 continuous
T_J Max °C	200
P_TOT W	7
f_T min (MHz)	500
C_OB	35pF max @ 40 MHz 50mA (see datasheet for full curves)
h_fe
I_C for h_fe
Similar / equivalents

Outline:

Pinout:

Notes: In view of the power levels for which this transistor is used, a heatsink is normally used on the can, but remember the can is connected to the collector so care may be needed to ensure this does not physically touch other parts of the circuit and become shorted to ground,etc.

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameers that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.