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2N3563 Transistor Data
Key transistor data for the 2N3563 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The 2N3563 bipolar junction transistor is a type that is intended for use as a low power VHF RF amplifier.
Key details and performance parameters for the 2N3563 transistor.
| 2N3563 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN silicon |
| Package type | TO106 |
| VCBO max (V) | 30 |
| VCEO max (V) | 12 |
| VEBOmax (V) | 2 |
| IC max (mA) | 50 |
| TJ Max °C | 125 |
| PTOT mW | 200 |
| fT min (MHz) | 600 |
| COB | 1.7pF |
| hfe | 30 - 200 |
| IC for hfe | 1 mA |
| Similar / equivalents | |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
• Details and applications
The 2N3563 bipolar junction transistor is a type that is intended for use as a low power VHF RF amplifier.
Written by Ian Poole .
Experienced electronics engineer and author.
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