2N3924 Transistor Data

Key transistor data for the 2N3924 RF power transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The 2N3924 is an NPN overaly transistor in a TO39 metal package with the collector connected to the case.

The transistor is an RF power transistor intended for VHF transmitting use either as a driver or an output device dependent upon the power levels needed.

The maximum RF output power is specified as being 4 watts at 175 MHz.

Key details and performance parameters for the 2N2924 transistor.

Transistor parameters & data
Parameters	Details
Transistor type	NPN silicon RF power transistor
Package type	TO39
V_CBO max (V)	36
V_CEO max (V)	18
V_EBOmax (V)	4
V_CEsat (V)	750 mV @ I 250 mA
I_C max (mA)	1500 peak
T_J Max °C	200
P_TOT W	7
f_T min (MHz)	250
C_OB	20pF
h_fe
I_C for h_fe
Similar / equivalents	2N3553 is very close in performance

Outline:

Pinout:

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameers that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

A heatsink is often used with this transistor to enable it to provide its full output capability but beware the collector is directly connected to the metal can of the TO39 package.