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2N5068 Transistor Data

Key transistor data for the 2N5068 NPN power transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The 2N5068 is an NPN power transistor manufactured by the epitaxial base process, and it has been designed for general purpose amplifier and switching applications.

The transistors in the series 2N5067, 2N5068 and 2N5069 are all NPN transistors and complementary to the PNP versions, 2N4901, 2N4902, and 2N4903 series.

The 2N5068 is the 'mid-range' voltage transistor in the series, having VCEO and VCBO figures of 60 volts against the 40 volts for the 2N5067 and the 80V for the 2N5069.

Other parameters are identical and it can still handle a large amount of power but where high voltages are not needed.

Key details and performance parameters for the 2N5068 transistor.

Transistor Datasheet Parameters & Data
Parameters	Datasheet Details
Transistor type	NPN silicon power transistor
Package type	TO3
V_CBO max (V)	60
V_CEO max (V)	60
V_EBOmax (V)	5
I_C max (A)	5
T_J Max °C	200
P_TOT W	87
f_T min (MHz)	4
C_OB
h_fe	25 - 80
I_C for h_fe	1 A
Similar / equivalents

Outline:

Pinout:

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The device is available from a number of stockists and electronic component distributors.

• 2N45068 additional data

These transistors, 2N5067 - 2N5069 and the complementary PNP 2N4901 - 2N4903 are high power transistors capable of dissipating up to 87 or 87.5 watts.

the 2N5068 is the mid voltage range device in the series with the 2N5067 and 2N5069 having lower and higher operating voltages.

These devices use the rather old TO3 style package, but this does have the advantage that high power levels can be dissipated with relative ease, provided that the transistors are mounted on a heatsink.

Fortunately the mounting kits of electrically insulative washers giving high thermal conductivity are still available and enable these transistors to be mounted onto the heatsink.

One point to watch is that the whole of the case of the transistor is connected tot he collector and as this is likely to be at a good voltage above ground, care must be taken not to short it out - as can easily be done with a stray screwdriver!