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A1015 Transistor Data
Key transistor data for the A1015 PNP general purpose transistor including: pinout, package type and many other key transistor datasheet details
The A1015 is described as an PNP epitaxial silicon transistor with a dissipation up to 400mW.
It's a low power device with a lower fT than many other transistors, but it is widely available, low cost, and it fulfils the majority of functions for a general purpose low end device.
Key details and performance parameters for the A1015 transistor.
| A1015 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | PNP silicon |
| Package type | TO92 |
| VCBO max (V) | -50 |
| VCEO max (V) | -50 |
| VEBOmax (V) | |
| VCEsat (V) | -0.3 V typ, -0.5max @ I |
| IC max (mA) | 150 |
| TJ Max °C | -150 |
| PTOT mW | 400 |
| fT min (MHz) | 80 MHz min @VCE -10V |
| COB | 15pF |
| hFE | 70 - 400 see classifications below. |
| IC for hfe | |
| Similar / equivalents | |
Outline:
Pinout:
A1015 hFE bands
| A1015 hFE classifications |
|||
|---|---|---|---|
| Classifications | O | Y | GR |
| hFE | 70 - 140 | 120 - 240 | 200 - 400 |
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
• A1015 pinout
It is worth taking special note of the A1015 pinout as this differs from many other devices.
It is very easy to mistake the pins and rather than the normal emitter, base, collector order, it is emitter collector base.
• A1015 applications
The A1015 transistor can be used in a huge number of circuits. It is a widely available transistor that can be used in a variety of low power applications.
Often it is used in general amplifier circuits as well as oscillators, timers, drivers and the like.
• A1015 manufacturers
There are several manufacturers for te A1015 as it is a widely used PNP transistors.
Fairchild manufactures it under-the part number KTA1015 and describes it as a low power amplifier device.
On-Semiconductor manufactures it as the KSA1015 describing it as a PNP epitaxial silicon transistor.
It is also manufactured by Changjiang Electronics Tech which also manufactures the complementary C1015 as well.
Written by Ian Poole .
Experienced electronics engineer and author.
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