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AF116 Transistor Data

Key transistor data for the AF116 germanium PNP high frequency (for its day) transistor including key electrical parameters, pinout, package type and many other key transistor details.

The AF117 was an RF transistor used in many radios and other applications where higher frequencies were needed. Although by today's standards it has a relatively poor performance, in its day, it was a great transistor.

The AF116 was a PNP germanium diffusion alloy transistor intended as FM IF amplifier or AM broadcast mixer / oscillator. It is found relatively frequently in these types of roles.

The transistor was manufactured by a number of companies including Mullard, Philips and Siemens.

The AF116 is virtually identical to the AF117 in terms of its basic parameters which are still provided below.



Key details and performance parameters for the AF117 transistor.


Transistor parameters & data
 
Parameters Details
Transistor type PNP germanium transistor
Package type TO7
VCBO max (V) 32
VCEO max (V) 15
VEBOmax (V) 2
IC max (mA) 10
TJ Max °C 75
PTOT mW 75
fT min (MHz) 75
COB 3p
hfe 50 min
IC for hfe 1 mA
Similar / equivalents AF124

    Outline:



    Pinout:



Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 



Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.


Notes and supplementary information

 

  •   Performance and specification

the AF116 was one of a series of alloy diffused germanium transistors manufactured by Philips / Mullard in the 1960s.

Although the specifications appear to be very similar according toth e data books, the AF117 tended to be used more widely in AM radios whereas the AF114 - 116 tended to be more widely used in FM radios.

  •   Reliability

The AF116 like others in the series have proved to be very unreliable in the long term. They are a common cause of failure in many vintage transistor radio sets.

They tend to develop internal short-circuits between the can and either the collector or emitter. Sometimes it is possible to tap the device sharply at which point it might possible crackle or come to life.

It appears that the cause is that minute hair-like conductive zinc strands grow over time from the zinc based encapsulation and these can cause short circuits within the encapsulation of the device.

Replacement with the later AF121, 124, 125 etc can be a way forward, but these types have long ceased production and they are difficult to obtain, and also not as reliable as modern devices.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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