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BC550 Transistor Data

Key transistor data for the BC547 general purpose transistor including key electrical parameters, pinout, package type and many other key transistor details.



Key details and performance parameters for the BC550 transistor.


BC550 transistor parameters & data
 
Parameters Details
Transistor type Low noise silicon general purpose NPN transistor
Package type TO92 (plastic)
VCBO max (V) 50
VCEO max (V) 50
VEBOmax (V) 5
VCEsat (V) 250mV @ I 10 mA
IC max (mA) 100
TJ Max °C 150
PTOT mW 500
fT min (MHz) 300
COB
hfe 110 - 800
IC for hfe 10
Similar / equivalents

    Outline:



    Pinout:

Notes:   This is a low noise and higher voltage version in the BC546, 547, 548, 549, 550 family of general purpose and switching transistors family. The noise figure for this device is 3 dB max, but typically 1.4 dB at 1 kHz.



Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameers that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 



Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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