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BC847 Transistor Data

Key transistor data for the BC850 NPN switching & amplifier transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

There are several transistors in the series, BC846, BC847, BC848, BC849 and the BC850. They are all designed to be NPN epitaxial silicon transistors for switching and amplifier applications.

The BC847 provides the an intermediate level of voltage withstand and operation, being higher than the BC848, but lower than the BC846.



Key datasheet details and performance parameters for the BC847 transistor.


BC847 transistor datasheet parameters & data
 
Parameters Details
Transistor type NPN switching & amplifier
Package type SOT-23
Transistor SMD Ident** 8BA & 8BB
VCBO max (V) 50
VCEO max (V) 45
VEBOmax (V) 6
VCEsat (V) 90mV typ @ I 10 mA
IC max (mA) 100
TJ Max °C 150
PTOT mW 310
fT min (MHz) 300
COB 3.5pF typical and 6pF max
hfe see below
IC for hfe
Similar / equivalents

 

    Outline & pinout:

 

** Transistor SMD identification:   In view of the fact that it is not possible to fully mark surface mount transistors with their full part number a short form identification or marking is added to the package.

This is typically a three character identification. For the BC846 this is either 8BA or 8BB dependent upon the exact device.



Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 



Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.


Notes and supplementary information

The BC847 is a surface mount NPN silicon transistor in a surface mount SOT23 package and it has the standard pinout configuration that might be expected.

  •   hFE for variants

Like others in the series there are three variants of the BC847 according to the level of current gain. There's the three ranges of hFE - A: 110 - 220,   B: 200 - 450,   C: 420 - 800.

The suffixes A, B or C are added to the overall part number so that the required selection can be made.

  •   Noise performance

The BC847 has its noise figure specified despite not being classified as a low noise device.

Like the BC846 and BC848, the noise performance is specified as being between 2 dB (typical) and 10 dB maximum with a VCE of 5V collector current Ic of 100µA, RG of 2kΩ and f = 1 kHz.

  •   Availability & sources

The device is available from a number of stockists and electronic component distributors.


 


Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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