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BC847 Transistor Data
Key transistor data for the BC850 NPN switching & amplifier transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
There are several transistors in the series, BC846, BC847, BC848, BC849 and the BC850. They are all designed to be NPN epitaxial silicon transistors for switching and amplifier applications.
The BC847 provides the an intermediate level of voltage withstand and operation, being higher than the BC848, but lower than the BC846.
Key datasheet details and performance parameters for the BC847 transistor.
| BC847 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN switching & amplifier |
| Package type | SOT-23 |
| Transistor SMD Ident** | 8BA & 8BB |
| VCBO max (V) | 50 |
| VCEO max (V) | 45 |
| VEBOmax (V) | 6 |
| VCEsat (V) | 90mV typ @ I |
| IC max (mA) | 100 |
| TJ Max °C | 150 |
| PTOT mW | 310 |
| fT min (MHz) | 300 |
| COB | 3.5pF typical and 6pF max |
| hfe | see below |
| IC for hfe | |
| Similar / equivalents | |
Outline & pinout:
** Transistor SMD identification: In view of the fact that it is not possible to fully mark surface mount transistors with their full part number a short form identification or marking is added to the package.
This is typically a three character identification. For the BC846 this is either 8BA or 8BB dependent upon the exact device.
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
The BC847 is a surface mount NPN silicon transistor in a surface mount SOT23 package and it has the standard pinout configuration that might be expected.
• hFE for variants
Like others in the series there are three variants of the BC847 according to the level of current gain. There's the three ranges of hFE - A: 110 - 220, B: 200 - 450, C: 420 - 800.
The suffixes A, B or C are added to the overall part number so that the required selection can be made.
• Noise performance
The BC847 has its noise figure specified despite not being classified as a low noise device.
Like the BC846 and BC848, the noise performance is specified as being between 2 dB (typical) and 10 dB maximum with a VCE of 5V collector current Ic of 100µA, RG of 2kΩ and f = 1 kHz.
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
Written by Ian Poole .
Experienced electronics engineer and author.
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