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BC849 SMD Transistor Data
Key transistor data for the BC849 NPN general purpose transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The BC849 is a general purpose transistor housed within an SOT23 surface mount, SMD package. Some datasheets also describe this device as being for switching and general purpose applications.
The complementary PNP device to the BC849 is the BC850 transistor.
Key datasheet details and performance parameters for the BC850 transistor.
| nnn transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN general purpose |
| Package type | SOT23 |
| Transistor SMD Ident** | |
| VCBO max (V) | 30 |
| VCEO max (V) | 30 |
| VEBOmax (V) | 5 |
| IC max (mA) | 100 |
| TJ Max °C | 150 |
| PTOT mW | 250 |
| fT min (MHz) | 100 |
| COB | 3.5pF typical |
| hfe | see below |
| IC for hfe | |
| Similar / equivalents | |
Outline & pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
The BC849 is a popular surface mount NPN silicon transistor in a surface mount SOT23 package.
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
• hFE for variants
The BC849 has three variants according to the gain, A: 110 - 220, B: 200 - 450, C: 420 - 800.
The suffixes A, B or C are added to the overall part number so that the required selection can be made.
• Noise performance
Although the BC849 is not designated a low noise transistor it offers a relatively good level of performance.
The noise performance is specified as being a 4.0 dB maximum with a VCE of 5V collector current Ic of 200µA, RG of 2kΩ and f = 10 Hz to 15.7 kHz.
Written by Ian Poole .
Experienced electronics engineer and author.
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