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C1815 Transistor Data

Key transistor data for the C1815 NPN general purpose transistor including: pinout, package type and many other key transistor datasheet details

The C1815 is described as an NPN epitaxial silicon transistor with a dissipation up to 400mW.



Key details and performance parameters for the C1815 transistor.


C1815 transistor datasheet parameters & data
 
Parameters Details
Transistor type PNP silicon
Package type TO92
VCBO max (V) 60
VCEO max (V) 50
VEBOmax (V) 5
VCEsat (V) 0.1 V typ & 0.25 V max @ I 100 mA
IC max (mA) 150
TJ Max °C 150
PTOT mW 400
fT min (MHz) 80 MHz min @VCE 10V
COB 2pF
hFE 70 - 700 see classifications below.
IC for hfe 6 mA
Similar / equivalents

    Outline:



    Pinout:

C1815 hFE bands


C1815 hFE classifications
 
Classifications O Y GR L
hFE 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700


Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 

Read more about . . . . Transistor Data-sheet Specifications & Parameters.


Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

 

 

Notes and supplementary information

 

  •   Availability & sources

The device is not widely available through distributors.



  •   C1815 pinout

It is worth taking special note of the C1815 pinout as this differs from many other devices.

It is very easy to mistake the pins and rather than the normal emitter, base, collector order, it is emitter collector base, i.e. the collector is the centre lead.

  •   C1815 applications

The C1815 transistor can be used in a huge number of circuits. It is a widely available transistor that can be used in a variety of low power applications.

Often it is used in general amplifier circuits as well as oscillators, timers, drivers and the like.

As it has its complementary PNP transistor, it can often be used in low power class B or push pull audio output stages for small electronic devices, although the output power levels will be relatively low.

  •   C1815 manufacturers

There are several manufacturers for the C1815 as it is a widely used PNP transistors.

Fairchild manufactures it under-the part number KTC1815 and describes it as a low power amplifier device.

On-Semiconductor manufactures it as the KSC1815 describing it as a PNP epitaxial silicon transistor.

It is also manufactured by Changjiang Electronics Tech as well as a variety of other less well known companies.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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