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MJE182 NPN Silicon Transistor Data
Key transistor data for the MJE182 NPN transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The MJE182 is a low power audio amplifier and low current high speed switching transistor with a high operating voltage capability.
The transistor is an NPN epitaxial silicon transistor in a TO126 package - it is also worth noting that the pinout is emitter collector base in that order and not the usual emitter base collector.
The MJE182 is the transistor with the highest voltage ratings of the series consisting of the MJE180, 181 and the 182.
Apart fromt he voltage ratings, the MJE182 shares its other parameters with the other transistors int he series.
Key details and performance parameters for the MJE182 transistor.
| MJE182 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN silicon |
| Package type | TO126 |
| VCBO max (V) | 100 |
| VCEO max (V) | 80 |
| VEBOmax (V) | 7 |
| VCEsat (V) | 300mV @ I |
| IC max (A) | 3 |
| TJ Max °C | 150 |
| PTOT W | 1.5 |
| fT min (MHz) | 50 |
| COB | 30pF |
| hfe | 50 - 250 |
| IC for hfe | 100mA |
| Similar / equivalents | |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
• Transistor series
There are other similar transistors in this series: MJE180 to MJE182 their performance is similar in many respects.
The MJE180 is the more widely used, but it is the lowest voltage version, although it is still more than adequate for most circuit designs.
The MJE182 has the highest voltage ratings with a VCEO of 80 volts and a VCBO of 100 volts.
Written by Ian Poole .
Experienced electronics engineer and author.
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