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MJE2955 Transistor Data

Key transistor data for the MJE2955 PNP power transistor complementary to MJE3055 (TO220 version of 2N3055) including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The MJE2955 is a rugged power transistor widely used for amplifier and power switching circuits. It was a popular device used in many power audio amplifiers.

The device is complementary to the MJE3055 enabling class B operation for linear amplifiers.

Both devices are still widely available and manufactured by a variety of manufacturers.



Key details and performance parameters for the MJ2955 transistor.


Transistor parameters & data
 
Parameters Details
Transistor type PNP silicon power / switching
Package type TO220
VCBO max (V) -70
VCEO max (V) -60
VEBOmax (V) -5
IC max (A) -10
TJ Max °C 150
PTOT W 90
fT min (MHz) 2
COB
hfe 20 - 70
IC for hfe 4 A
Similar / equivalents

    Outline:



    Pinout:

 



Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 



Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.


Notes and supplementary information

This silicon power transistor is the complementary one to the MJE3055, a TO220 version of the iconic 2N3055.

  •   Availability & sources

The device is available from a number of stockists and electronic component distributors.


 


  •   Mounting the MJE3055

Like other transistors in a TO220 case, it is necessary to isolate the metal backplate of the transistor from the heatsink. A mica washer, together with an insulating washer for the screw fixing hole will provide the necessary mounting.

It is also wise to use from some thermal (silicone) grease to ensure good thermal contact between the transistor and the washer and then the washer and the heatsink.

  •   Availability

The MJE29555 transistor is still manufactured these days and can be obtained through a some distributors. One manufacturer is On-Semiconductor.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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