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OC205 Transistor Data
Key transistor data for the OC200 PNP audio silicon transistor for output stages including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The OC205 was a PNP silicon alloy transistor intended as an AF amplifier or general purpose transistor. It was only intended to be supplied for industrial purposes and not open to the general market.
Key details and performance parameters for the OC71 transistor.
| OC200 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | PNP silicon audio transistor |
| Package type | X02 |
| VCBO max (V) | -60 |
| VCEO max (V) | -60 |
| VEBOmax (V) | -12 |
| IC max (mA) | 250 |
| TJ Max °C | 150 |
| PTOT mW | 300 |
| fT min (MHz) | 0.45 |
| COB | 50 |
| hfe | 10 min |
| IC for hfe | 150 mA |
| Similar / equivalents | |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
The OC200 series, with part numbers between OC200 - OC206 were the first silicon transistor released by Philips / Mullard.
• Technology details
The OC205 is a high voltage transistor compared to the others in the series offering a VCBO and VCEO of -60V which was significant for its day.
The level of current gain, though was very modest with a minimum figure of 10.
The OC200 transistor series, including the OC205, were described as alloy junction types for audio and general industrial applications.
Alloy junction transistors were difficult to make in silicon due to stress fracturing at the alloy junctions caused by differential expansion between the alloy and the silicon.
Other companies had abandoned silicon alloy junction transistor technology in favour of other silicon processes and were finding far more success.
In addition to the use of the alloy junction technology, most other companies were starting to standardise on NPN rather than PNP transistors, meaning that the OC200 series were behind the curve in terms of their overall development.
Despite the difficulties, the OC200 series including the OC205 were relatively widely used.
Written by Ian Poole .
Experienced electronics engineer and author.
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