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1N5818 Schottky Diode Data
Key data for the 1N5818 Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
The 1N5818 is one of a series of Schottky diodes that provides low forward voltage drops and a reasonable reverse voltage. This one has a higher reverse voltage of 30V compared to the 1N5817.
The Schottky diode has a guard ring within the device structure to help with overvoltage protection, preventing early breakdown of the diode.the 1N5818 also boasts very small conduction losses, low forward voltage drop as well as extremely fast switch and high frequency operation.
The diode has a current capability of 1A and can be considered as a medium current device, although still with a low maximu reverse voltage.
Key details and performance parameters for the 1N5818 diode.
| 1N5818 diode datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Diode type | Schottky barrier plastic rectifier diode |
| Package type | DO41 |
| Repetitive peak reverse voltage, VRRM | 30V |
| Non-repetitive peak reverse voltage, VRSM | 36V |
| DC blocking voltage, VR | 30V |
| RMS reverse voltage, VR(RMS) | 21V |
| Forward continuous current, IF | 1A |
| Non-repetitive forward surge current, IFSM | 25A |
| Power dissipation, PTOT | |
| Junction temperature (°C) | 125 |
| Forward voltage VF | 0.55V @ 1A |
| Reverse leakage IR | 1mA @ 30V @ 25°C |
| Diode capacitance CD | 110pF |
| Reverse recovery time | |
Outline & pinout:
Explanation of major diode parameters
| Parameter | Explanation |
|---|---|
| Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
| Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
| DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
| RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
| Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
| Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
| Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
| Parameter | Explanation |
|---|---|
| Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
| Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
| Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
| Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
| Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
| Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
| Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main operational amplifier parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the regulator, but are normally deemed to be less important.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The 1N5818 is available from a number of stockists and electronic component distributors many of which are given in the table below.
1N5818 Component Distributor, Stock and Pricing
• Further details
Schottky diodes are well known for having a high reverse leakage current, and often this is not a major issue.
Any design should be able to withstand leakage levels much higher than those experienced by standard PN junction diodes, i.e. 1mA instead of the few nanoAmps of most PN junction diodes
Written by Ian Poole .
Experienced electronics engineer and author.
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