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1N5822 Schottky Diode Data
Key data for the 1N5822 3A 40V Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
The 1N5822 is the highest voltage rating diode in the series 1N58207 - 1N5822 series. These diodes boast a current capability of 3A which is ideal for many applications, and a maximum reverse voltage of 40V.
The diode also has a guard ring incorporated into the structure to make the diode more resilient to breakdown and along with this it also gives very low conduction losses and a low forward voltage drop.
The 1N5822 provides extremely fast switching and enables high frequency operation as a result of the Schottky structure.
In addition to this, the diode offers a high forward surge current capacity, and it also offers a higher reverse voltage than the 1N5820.
Key details and performance parameters for the 1N5822 diode.
| 1N5822 diode datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Diode type | 3A Schottky barrier plastic rectifier diode |
| Package type | DO201 |
| Repetitive peak reverse voltage, VRRM | 40V |
| Non-repetitive peak reverse voltage, VRSM | 48V |
| Working peak reverse voltage, VRWM | 30V |
| DC blocking voltage, VR | 40V |
| RMS reverse voltage, VR(RMS) | 28V |
| Forward continuous current, IF | 3A |
| Peak non-repetitive forward surge current, IFSM | 80A for 8.3ms |
| Power dissipation, PTOT | |
| Junction temperature (°C) | 125 |
| Forward voltage VF | 0.475V @ 3A |
| Reverse leakage IR | 2mA @ 20V @25°C |
Outline & pinout:
Explanation of major diode parameters
| Parameter | Explanation |
|---|---|
| Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
| Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
| DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
| RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
| Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
| Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
| Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
| Parameter | Explanation |
|---|---|
| Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
| Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
| Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
| Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
| Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
| Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
| Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main operational amplifier parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the regulator, but are normally deemed to be less important.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The 1N5822 is available from a number of stockists and electronic component distributors many of which are given in the table below.
1N5822 Component Distributor, Stock and Pricing
• Further details
The 1N5822 is a relatively high current Schottky diode rectifier capable of a high forward surge current of 80A for 8ms.
This makes it ideal for many low voltage rectifier applications, although the low reverse voltage, a feature of silicon Schottky diodes can be an issue.
Being a silicon Schottky diode, it does not offer a huge reverse voltage capability, but the 1N5822 can withstand 40V as detailed within the data.
• Typical applications
The 1N5822 find many uses in many circuits. It can be used in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection circuits.
Written by Ian Poole .
Experienced electronics engineer and author.
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