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C6D25170H 1700V 25A Schottky Diode Data

Data for the C6D25170H 1700V 25A Schottky diode including the electrical parameters, performance, features, outline, package type and many other key datasheet details.

The C6D10170H is a 6th Generation 1700 V, 25 A silicon carbide Schottky diode which provides significant performance improvements over silicon Schottky diodes as well as over previous generations of silicon carbide Schottky diodes.

This diode has an enormous current capability which enables it to single handedly be able to meet the needs of all but the most high current circuits and applications.

Key details and datasheet performance parameters for the C6D25170H diode.

C6D25170H diode datasheet parameters & data
Parameters	Details
Diode type	1700V 5A SiC Schottky diode
Package type	TO247
Repetitive peak reverse voltage, V_RRM	1700V
Working peak reverse voltage, V_RWM	1700V
DC blocking voltage, V_R	1700V
Forward continuous current, I_F	29A @150°C, 39A @ 135°C, 83A @ 25°C
Repetitive forward surge current, I_FSM	131A @ 25°C with 10ms half sine wave 73A @110°C with 10ms half sine wave
Non-repetitive forward surge current, I_FSM	206A @ 25°C with 10ms half sine wave 73A @110°C with 10ms half sine wave
Power dissipation, P_TOT	375W @ 25°C, 162W @ 110°C
Junction temperature (°C)	175
Forward voltage V_F	1.45V typ & 1.7V max @ 25A and 25°C 2.0V typ & 2.8V max @ 25A and 170°C
Reverse leakage I_R	10µA typ, 45 µA max at 1700V & 25°C 60µA typ, 225 µA max at 1700V & 175°C
Primary manufacturer	Wolfspeed (Cree)

Outline & pinout:

Explanation of major diode parameters

Parameter	Explanation
Repetitive peak reverse voltage, V_RRM	This is the maximum value of the short period peak reverse voltage that can be sustained.
Working peak reverse voltage, V_RWM	This is the maximum value of the continuous reverse voltage that can be applied to the diode.
DC blocking voltage, V_R	This is the maximum reverse DC voltage that should be applied across the diode.
RMS reverse voltage, V_R(RMS)	As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value.
Forward continuous current, I_F	This is the maximum forward current that can be sustained by the diode.
Average rectified current, I_F	This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode.
Non-repetitive forward surge current, I_FSM	This is the maximum surge current that can be handled - it should only be present for a short time.

Parameter	Explanation
Power dissipation, P_TOT	The maximum power dissipation that can be sustained within the device.
Junction temperature (°C)	This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment.
Forward voltage V_F	This parameter gives the forward voltage drop for a particular current passed through the diode.
Breakdown voltage V_BR	This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device.
Leakage current I_R	This is the current that flows under stated conditions when the diode is reverse biassed.
Diode capacitance C_D	The diode capacitance, C_D may also be referred to as the junction capacitance, C_J. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage.
Reverse recovery time	If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state.

These are the main operational amplifier parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the regulator, but are normally deemed to be less important.

Read more about . . . . Diode Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The C6D25170H is available from a number of stockists and electronic component distributors many of which are given in the table below.

C6D25170H Component Distributor, Stock and Pricing

• Further details

Silicon carbide Schottky diodes like this C6D25170H can be easily paralleled to meet various application demands, without concern of thermal runaway. However with the extraordinarily high current capability of the diode, this is unlikely in many electronics circuits, although for power applications it could well be needed.

The reduced cooling requirements and other factors such as the improved thermal performance mean that these diodes are able to provide lower overall system costs in a variety of applications.

The lower overall system or module costs arise from lower cooling requirements, as well as their improved efficiency.

Typical applications for the C6D25170H diode include industrial switched mode power supplies, uninterruptible & AUX power supplies, boost for PFC & DC-DC stages, and solar iverters.