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FFSM0865B Silicon Carbide Schottky Diode Data
Key data for the FFSM0865B silicon carbide Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
Silicon carbide Schottky diodes are being used increasingly where higher reliability, higher reverse voltages and lower reverse current than that provided by silicon.
The FFSM0865B from OnSemi is one of a growing number of SiC diodes available ont he market place.
Key details and datasheet performance parameters for the FFSM0865B SiC diode.
| FFSM0865B SiC diode datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Diode type | SMD SiC Schottky diode 8A 650V |
| Package type | PQFN4 |
| Repetitive peak reverse voltage, VRRM | 650V |
| Working peak reverse voltage, VRWM | 650V |
| DC blocking voltage, VR | 650V |
| Forward continuous current, IF | 8A |
| Non-repetitive forward surge current, IFSM | 490A @ 25°C for 10µs, and 42A for 8.3ms |
| Power dissipation, PTOT | 91W |
| Junction temperature (°C) | 175 |
| Forward voltage VF | 1.39V typ, 1.7V max @ 8.0A |
| Reverse leakage IR | 40µA at 650V & 25°C |
| Diode capacitance CD | 336pF @ VR 1V, 39pf @ VR 200V |
Outline & pinout:
Pin 5 cathode, pins 3 & 4 anode, pins 1 & 2 floating.
Explanation of major diode parameters
| Parameter | Explanation |
|---|---|
| Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
| Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
| DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
| RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
| Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
| Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
| Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
| Parameter | Explanation |
|---|---|
| Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
| Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
| Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
| Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
| Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
| Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
| Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main operational amplifier parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the regulator, but are normally deemed to be less important.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The FFSM0865B is available from a number of stockists and electronic component distributors many of which are given in the table below.
FFSM0865B Component Distributor, Stock and Pricing
• Further details
Silicon Carbide, SiC Schottky Diodes use a new semiconductor technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, higher operating frequency, increased power density, and reduced EMI, which can result in reduced system size and a lower overall cost.
Many new switching supplies are using SiC to good effect and even though the unit cost of the diode is higher, the greater efficiency and improved performance is resulting in a much lower overall cost.
These diodes are also being used as general purpose diodes as well as in SMPSs, solar inverters uninterruptible power supplies and power switching circuits.
Written by Ian Poole .
Experienced electronics engineer and author.
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