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IDH02SG120 Schottky Diode Data
Key data for the IDH02SG120 Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
The IDH02SG120 is a silicon carbide Schottky diode capable of passing up to 2A and withstanding a maximum reverse voltage of 1200V.
It is described as a 3rd Generation thinQ! SiC Schottky Diode, and being a silicon carbide diode it has no reverse recovery and no forward recovery and it is capable of withstandinga significant current surge.
Key details and datasheet performance parameters for the IDH02SG120 diode.
| IDH02SG120 diode datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Diode type | Silicon carbide Schottky diode 1200V 2A |
| Package type | TO220-2L |
| Repetitive peak reverse voltage, VRRM | 1200V |
| Working peak reverse voltage, VRWM | 1200V |
| DC blocking voltage, VR | 1200V |
| Forward continuous current, IF | 2A |
| Non-repetitive forward surge current, IFSM | 15A @ 25°C for 10ms 13A @ 150°C for 10ms |
| Power dissipation, PTOT | 75W |
| Junction temperature (°C) | 175 |
| Forward voltage VF | 1.65V typ, 1.8V max @ 2A @ 25°C 2.55V typ @ 2A @ 150°C |
| Reverse leakage IR | 2µA typ, 48µA max @ 1200V & 25°C 8µA typ, 40µA max @ 1200V & 150°C |
| Primary manufacturer | Infineon |
Outline & pinout:
Explanation of major diode parameters
| Parameter | Explanation |
|---|---|
| Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
| Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
| DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
| RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
| Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
| Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
| Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
| Parameter | Explanation |
|---|---|
| Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
| Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
| Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
| Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
| Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
| Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
| Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main operational amplifier parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the regulator, but are normally deemed to be less important.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The IDH02SG120 is available from a number of stockists and electronic component distributors many of which are given in the table below.
IDH02SG120 Component Distributor, Stock and Pricing
• Further details
As stated inth e datasheet, this device is ideally suited for applications lke SMPS usage, motor drives, solar applications and uninterruptible power supplies.
Written by Ian Poole .
Experienced electronics engineer and author.
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