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2N2222 Transistor Data
Key transistor data for the 2N2222 switching transistor including key electrical parameters, pinout, package type and many other key transistor details.
the 2N2222 transistor is a very popular transistor that has been available for many years.
It is an ideal general purpose transistor for both analogue and switching applications and it can handle a good amount of current and exhibits a low VCE(sat).
Key details and performance parameters for the 2N2222 transistor.
| Transistor parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN silicon switching transistor |
| Package type | TO18 |
| VCBO max (V) | 60 |
| VCEO max (V) | 30 |
| VEBOmax (V) | 5 |
| VCEsat (V) | 400mV @ I |
| IC max (mA) | 800 |
| TJ Max °C | 175 |
| PTOT nW | 500 |
| fT min (MHz) | 250 |
| COB | 8p |
| hfe | 100 min |
| IC for hfe | 150 mA |
| Similar / equivalents | BSW64, PN2222 |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
The 2N2222 and 2N2222A are switching transistors which are ideal for many applications and they work well, even for some RF applications, although it's best to use a proper RF transistor for this.
• Availability & sources
The 2N2222 is available from a number of stockists and electronic component distributors many of which are given in the table below.
2N2222 Component Distributor, Stock and Pricing
• Notation
The 2N2222 and 2N2222A are normally expected to have a small metal TO18 can. A version of the 2222 transistor is available in a plastic encapsulation and this is normally designated the PN2222, but some devices in a plastic encapsulation have been seen bearing the 2N2222 designation.
• Notable features
The 2N2222 is a versatile NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching, celebrated for its reliability and widespread use in electronics since the 1960s.
High Current Gain : hFE range of typically 100 - 300, enabling efficient signal amplification with low base current.
Low Saturation Voltage : VCE(sat) as low as 0.3 V at 150 mA collector current, ideal for low-loss switching.
Fast Switching Speed : Transition frequency (fT) up to 300 MHz, supporting high-frequency applications like RF.
High Power Handling : Maximum collector current of 800 mA and power dissipation of 625 mW (TO-18 package), suitable for medium-power circuits.
Robust Voltage Ratings : VCEO breakdown voltage of 40 V, with wide operating temperature from -65°C to 175°C.
Low Noise Performance : Optimized for low-noise amplification in audio and sensor interfaces.
Compact Packaging Options : Available in TO-18 metal can or TO-92 plastic (often as a PN2222) for easy integration in through-hole designs.
Cost-Effective and Ubiquitous : Military-grade heritage (MIL-PRF-19500) ensures high reliability at low cost for hobbyist and production use.
• Typical applications summary
| Application Category | Typical Use Case | Device Feature Utilised |
|---|---|---|
| General Switching | Relay drivers and LED control in logic circuits. | Low VCE(sat) (0.3 V) and 800 mA current rating for efficient on/off operation. |
| Audio Amplifiers | Preamp stages in microphones and small speakers. | High hFE (100-300) and low noise for clean signal amplification. |
| RF Circuits | Oscillators and modulators in amateur radio. | 300 MHz fT for high-frequency performance. |
| Sensor Interfaces | Signal conditioning for temperature/humidity sensors. | Wide temperature range (-65°C to 200°C) and robust biasing flexibility. |
| Logic Level Shifting | Interface between TTL/CMOS logic families. | 40 V VCEO and fast switching for reliable level translation. |
Written by Ian Poole .
Experienced electronics engineer and author.
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