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2N5069 Transistor Data

Key transistor data for the 2N3773 NPN power transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The 2N3773 is an NPN power transistor designed to be used for high power audio, disk head positioners and other linear applications and circuits.

The device can also be used in power switching circuits where its high power capability comes into its own.

These power switching applications may include relay or solenoid drivers, DC-DC converters and inverters.




Key details and performance parameters for the 2N3773 transistor.


Transistor Datasheet Parameters & Data
 
Parameters Datasheet Details
Transistor type NPN silicon power transistor
Package type TO204 (TO3)
VCBO max (V) 160
VCEO max (V) 160
VEBOmax (V) 7
IC max (A) 16 A, peak 30 A
TJ Max °C 200
PTOT W 150
fT min (MHz)
COB
hfe 15 - 60
IC for hfe 8 A
Similar / equivalents

    Outline:



    Pinout:

 



Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 



Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.




Notes and supplementary information

 

  •   Availability & sources

The device is available from a number of stockists and electronic component distributors.


 


  •   2N3773 additional data

The transistor has been in widespread use for very many years and it is still widely available from a number of manufacturers.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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