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2N4901 Transistor Data
Key transistor data for the 2N4901 PNP power transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The 2N4901 is an PNP power transistor manufactured by the epitaxial base process, and it has been designed for general purpose amplifier and switching applications.
The transistors in the series 2N4901, 2N4902 and 2N4903 are all PNP transistors and complementary to the NPN versions, 2N5067, 2N5068, and 2N5069.
The 2N4901 is the 'low-range' voltage transistor in the series, having VCEO and VCBO figures of -40 volts against the -60 volts for the 2N4902 and the -80V for the 2N4903.
Other parameters are identical and it can still handle a large amount of power but where high voltages are not needed.
Key details and performance parameters for the 2N401 transistor.
| Transistor Datasheet Parameters & Data |
|
|---|---|
| Parameters | Datasheet Details |
| Transistor type | PNP silicon power transistor |
| Package type | TO3 |
| VCBO max (V) | -40 |
| VCEO max (V) | -40 |
| VEBOmax (V) | -5 |
| IC max (A) | 5 |
| TJ Max °C | 200 |
| PTOT W | 87 |
| fT min (MHz) | 4 |
| COB | |
| hfe | 25 - 80 |
| IC for hfe | -1 A |
| Similar / equivalents | |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
• 2N4901 additional data
The 2N4901 is classed as a PNP power transistor and it is suitable for new designs.
Manufacturers of the device include Central Semiconductor.
Although many manufacturers state the hFE is 20-80, some only give a minimum value which is 20.
Despite having the old TO3 style package, this transistor has a good performance were power handling capability is needed.
it is still easy to obtain the insulator sets for the TO3 transistors so this is not an issue.
Written by Ian Poole .
Experienced electronics engineer and author.
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