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2N4915 Transistor Data
Key transistor data for the 2N4915 NPN power transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The 2N4915 is an NPN power transistor manufactured by the epitaxial base process, and it has been designed for general purpose amplifier and switching applications.
Key details and performance parameters for the 2N4915 transistor.
| Transistor Datasheet Parameters & Data |
|
|---|---|
| Parameters | Datasheet Details |
| Transistor type | NPN silicon power transistor |
| Package type | TO3 |
| VCBO max (V) | 80 |
| VCEO max (V) | 80 |
| VEBOmax (V) | 5 |
| VCEsat (V) | 1.0 @ I |
| IC max (A) | 5 |
| TJ Max °C | 200 |
| PTOT W | 87 |
| fT min (MHz) | 4 |
| COB | |
| hfe | 20 - 100 |
| IC for hfe | -2.5 A |
| Similar / equivalents | 2N3442 |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
• Current gain hFE values
The value of hFE quoted varies between manufacturers. Some quote it is 20 - 100, others as a minimum or 20 for the NPN transistors in the series.
• 2N4915 additional data
The 2N4915 is classed as a PNP power transistor. It is currently manufactured by MicroChip and has an 'active' status, i.e. it is not obsolete or obsolescent. It is suitable for new designs.
There are other manufacturers of the device including Central Semiconductor Corp that has a good number of older semiconductor devices in their line.
The device is one of a series of devices that provide complementary operation: PNP - 2N4904 2N4905 2N4906, and NPN - 2N4913 2N4914 2N4915.
Written by Ian Poole .
Experienced electronics engineer and author.
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