Home » Component data » Transistor data » this page
BC327 Transistor Data
Key transistor data for the BC327 general purpose PNP transistor including key electrical parameters, pinout, package type and many other key transistor details.
The BC327 is a general purpose PNP silicon transistor encapsulated in a TO92 case with the standard E B C pinout.
The transistor is described as being for switching and amplifier applications, being suitable for AF drive stages and low power output stages.
The BC327 is complementary to the BC337 / BC338 NPN silicon transistors.
Key details and performance parameters for the BC327 transistor.
| BC327 Transistor Datasheet Parameters & Data |
|
|---|---|
| Parameters | Details |
| Transistor type | PNP silicon |
| Package type | TO92 |
| VCBO max (V) | |
| VCEO max (V) | -45 |
| VEBOmax (V) | -5 |
| VCEsat (V) | -.7V @ -500mA IC |
| IC max (mA) | -800 |
| TJ Max °C | 150 |
| PTOT mW | 625 |
| fT min (MHz) | 100 |
| COB | 12p |
| hfe | 100 - 630 see below. |
| IC for hfe | -100 mA |
| Similar / equivalents | |
Outline:
Pinout:
| BC327 hFE classifications |
|||
|---|---|---|---|
| Classifications | 16 | 25 | 40 |
| hFE | 100 ~ 250 | 160 ~ 400 | 250 ~ 639 |
Part numbers are BC327-16, BC327-25 and BC327-40.
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
• Basic details
The BC337 is an NPN silicon epitaxial planar transistor for switching and amplifier applications.
As complementary type, the NPN transistor, BC327 is recommended as they has similar complementary characteristics.
Written by Ian Poole .
Experienced electronics engineer and author.
Return to Component Data menu . . .
