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BC850 SMD Transistor Data
Key transistor data for the BC850 NPN switching & amplifier transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
There are several transistors in the series, BC850, BC846, BC847, BC848, and BC849. They are designed NPN epitaxial silicon transistors for switching and amplifier applications.
They are stated as being suitable for automatic insertion in thick and thin film circuits (as wella s normal SMT PCBs.
The BC850 is a low noise version of the series of transistors.
Key datasheet details and performance parameters for the BC850 transistor.
| nnn transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN switching & amplifier |
| Package type | SOT-23 |
| Transistor SMD Ident** | 8EA & 8EC |
| VCBO max (V) | 50 |
| VCEO max (V) | 45 |
| VEBOmax (V) | 5 |
| VCEsat (V) | 90mV typ @ I |
| IC max (mA) | 100 |
| TJ Max °C | 150 |
| PTOT mW | 310 |
| fT min (MHz) | 300 |
| COB | 3.5pF typical |
| hfe | see below |
| IC for hfe | |
| Similar / equivalents | |
Outline & pinout:
** Transistor SMD identification: In view of the fact that it is not possible to fully mark surface mount transistors with their full part number a short form identification or marking is added to the package.
This is typically a three character identification. For the BC850 this is either 8EA or 8EC.
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
The BC850 is a popular surface mount NPN silicon transistor in a surface mount SOT23 package.
• hFE for variants
The BC850 has three variants according to the gain, A: 110 - 220, B: 200 - 450, C: 420 - 800.
The suffixes A, B or C are added tot e overall part number so that the required selection can be made.
• Noise performance
The BC850 is designated as a low noise transistor in the series and as a result it has a much better guaranteed noise performance when compared to thhe others.
The noise performance is specified as being between 1.2 (typical) and 4.0 dB maximum with a VCE of5V collector current Ic of 100µA, RG of 2kΩ and f = 1 kHz.
For test conditions of VCE of5V collector current Ic of 100µA, RG of 2kΩ and f = 30 - 15000Hz, the noise figure is specified as 1.4 dB typical and 3.0 dB maximum.
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
Written by Ian Poole .
Experienced electronics engineer and author.
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