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OC200 Transistor Data
Key transistor data for the OC200 PNP audio silicon transistor for output stages including key electrical parameters, pinout, package type and many other key transistor datasheet details.
PNP silicon alloy transistor intended as an AF amplifier or general purpose transistor. It was only intended to be supplied for industrial purposes and not open to the general market.
Key details and performance parameters for the OC71 transistor.
| OC200 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | PNP silicon audio transistor |
| Package type | X02 |
| VCBO max (V) | -30 |
| VCEO max (V) | -25 |
| VEBOmax (V) | -20 |
| IC max (mA) | 100 |
| TJ Max °C | 150 |
| PTOT mW | 250 |
| fT min (MHz) | 0.45 |
| COB | 60 |
| hfe | 15 min |
| IC for hfe | 1 mA |
| Similar / equivalents | |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
The OC200 series, OC200 - OC206 were the first silicon transistor released by Philips / Mullard.
• Timeline
The first of the OC200 series silicon PNP transistors launched by Philips were introduced around 1959.As a result of the success of the PNP germanium transistors, the company had thought there was little reason to move on to silicon, but the greater advantages of silicon were starting t become obvious and other manufacturers were moving that way.
The OC200 and other transistors in the series were described as alloy junction types for audio and general industrial applications.
Alloy junction transistors were difficult to make in silicon due to stress fracturing at the alloy junctions caused by differential expansion between the alloy and the silicon. As a result, other companies had abandoned silicon alloy junction transistors and they were progressing using other techniques with silicon.
Written by Ian Poole .
Experienced electronics engineer and author.
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