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TIP32, TIP32A, TIP32B, TIP32C Transistor Data

Key transistor data for the TIP32 PNP switching transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The TIP32 series of transistors is described as a series of PNP epitaxial silicon transistors that have been designed for use in general purpose amplifier and switching applications.

The TIP32 transistors are virtually identical to the TIP31 series, except that they are the mirror image, bing PNP instead of NPN.

As the TIP31 and TIP32 are complementary this lends them ideally to being used in complementary output stages either as switching or linear output transistors.

The transistors are described as offering a high current gain-bandwidth product of 3 MHz minimum.




Key details and performance parameters for the TIP31 transistor.


TIP42 transistor datasheet parameters & data
 
Parameters Details
Transistor type PNP
Package type TO220
VCBO max (V) -60 up to 100 ***
VCEO max (V) -60 up to -100 ***
VEBOmax (V) -5
VCEsat (V) 1.2 @ I 3 A
IC max (A) 6
TJ Max °C 150
PTOT mW 40
fT min (MHz) 3.0
COB
hfe 25 min
IC for hfe 1.0 A
Similar / equivalents

    Outline:



    Pinout:



Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 



Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.




Notes and supplementary information

 

  •   Availability & sources

The device is available from a number of stockists and electronic component distributors.


 


  •   *** Maximum voltage

The TIP 42 has various maximum voltages according to the part number suffix, TIP32, 32A, 32B, 32C.

TIP32 transistor datasheet parameters & data
 
Transistor type VCBO max (V) VCEO max (V)
TIP32 -40 -40
TIP32A -60 -60
TIP32B -80 -80
TIP32C -100 -100

  •   TIP32 vs TIP42

The TIP32 and TIP42 transistors are very similar in their characteristics, and they are virtually interchangeable in many respects.

They are both PNP bipolar junction transistors and both are housed in the TO-220 package.

They are also general-purpose power transistors, commonly used in amplification and switching applications. A further similarity is the maximum operating voltages, and both have complementary NPN transistors: TIP 31 and TIP 41 respectively..

The main difference is that the TIP31 can handle 3 continuous and 5 amps peak whereas the TIP41 has maximum current ratings of 6 amps continuous and 10 amps peak.

The TIP32 can handle 40 watts dissipation against the 60 watts of the TIP42.

Generally the TIP42 is considered as the higher performance device.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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