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TIP35 Transistor Data
Key transistor data for the TIP35 NPN transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The TIP35 is described as a low collector emitter saturation voltage device for general purpose and audio applications.
The TIP35 is also complementary to the TIP36 PNP transistor allowing them both to be used in complementary or class B output stages.
The datasheet described the transistor as being manufactured in planar technology with a 'base-island' layout.
It states that this results in both the TIP35 and TIP36 transistors as having an exceptionally high gain and very low saturation voltage.
Key details and performance parameters for the TIP35 transistor.
| TIP35 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN silicon |
| Package type | TO247 |
| VCBO max (V) | 100** |
| VCEO max (V) | 100** |
| VEBOmax (V) | 5 |
| VCEsat (V) | 1.8 @ I |
| IC max (A) | 25 A continuous and 50 A peak |
| TJ Max °C | 150 |
| PTOT W | 125 |
| fT min (MHz) | 3.0 |
| COB | |
| hfe | 10 min 50 max |
| IC for hfe | 15A |
| Similar / equivalents | |
Outline:
Pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Some manufacturers including On-Semiconductor offer a variety of versions of the TIP35 and TIP36 with different operating voltages.
| TIP35A, B & C Voltage Ratings & Data |
||
|---|---|---|
| Transistor type | VCBO max (V) | VCEO max (V) |
| TIP35A | 60 | 60 |
| TIP35B | 80 | 80 |
| TIP35C | 100 | 100 |
The ST Microelectronics devices do not have the A, B, or C suffix and appear to be rated at the maximum voltages.
Notes and supplementary information
• Availability & sources
The device is available from a number of stockists and electronic component distributors.
• Manufacturers
Many companies have manufactured the TIP35 series transistors including ST MIcroelectronics, On-Semiconductor and many others.
• Package
The TIP35 and TIP36 have been available in a TO218 style package, but this appears to ahve been discontinued and only the TO247 version is now available.
Written by Ian Poole .
Experienced electronics engineer and author.
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